AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

Description:

The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product ordering option. AO4912 and AO4912L are electrically identical.

Features:

     Q1                      Q2
VDS (V) = 30V          VDS(V) = 30V
ID = 8.5A              ID=7A (VGS = 10V)
RDS(ON) < 17mΩ        <26mΩ (VGS = 10V)
RDS(ON) < 25mΩ        <31mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V 1A

Package included:

• 1 x AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor