Laptop Chip AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Description:
The AO4912 uses
advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier
combination for use in DC-DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost efficiency further Standard
Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L
is a Green Product ordering option. AO4912 and AO4912L are electrically
identical.
Features:
Q1 Q2
VDS (V) = 30V VDS(V) =
30V
ID =
8.5A ID=7A
(VGS = 10V)
RDS(ON) < 17mΩ <26mΩ (VGS =
10V)
RDS(ON) < 25mΩ <31mΩ (VGS =
4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V 1A
Package included:
1 x AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
